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ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, ex...

Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band ...

NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's ma...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly lumine...

Our TiS2 crystals are stabilized in 1T ohase (semimetallic phase). They are grow...

Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk an...

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical...

The only commercially available TlGaS2 vdW crystals have been synthesized at our...

The only commercially available TlInS2 vdW crystals have been synthesized at our...

Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials. Our cry...

Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2...

Single crystal 1Tphase TaS? (Tantalum disulfide) crystals come with guaranteed c...

Our single crystal SnS (Tin sulfide) crystals come with guaranteed optical, elec...

Magnetic semiconductor FePS3 has a monoclinic structure with the factor group C2...

Antimony sulfide is the chemical compound with the formula Sb2S3 which crystalli...